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2SK1837
Silicon N Channel MOS FET
REJ03G0979-0200 (Previous: ADE-208-1326) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D G
1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1837
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 500 30 50 200 50 250 150 -55 to +150
Unit V V A A A W
*2
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 500 30 -- -- 2.0 -- 22 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.085 35 8150 2100 180 80 250 550 220 1.1 620 Max -- -- 10 250 3.0 0.11 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS= 10 V*
3
ID = 25 A, VDS = 10 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 25 A, VGS = 10 V, RL = 1.2
3
IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1837
Main Characteristics
Power vs. Temperature Derating
400 1000 300 300
Operation in this area is limited by RDS(on)
10
10 0m s s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10 3 1 0.3
Ta = 25C
DC Op er
PW
ati
=
200
10
1m s
ms
on
(1
(T
sh
c=
ot)
100
25 C )
0
50
100
150
200
0.1
1
3
10
30
100
300
1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
8V 10 V 6V
Typical Transfer Characteristics
100
V DS = 20 V Pulse Test
Drain Current ID (A)
Pulse Test 5.5 V
60
Drain Current ID (A)
80
80
60
40
5V
40
20
4.5 V V GS = 4 V
20
Tc = 75C 25C - 25C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
5
50 A Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
1
Pulse Test
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance RDS (on) ()
4 3
0.5
0.2 0.1 0.05
V GS = 10, 15 V
2
20 A
1
I D = 10 A
0.02 0.01 5 10 20 50 100 200 500
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1837
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.5
Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
50
Tc = - 25C 25C 75C
0.4
20 10 5 2 1
V DS = 20 V Pulse Test
0.3
I D = 50 A 20 A
0.2
0.1
10 A
0 -40
0
40
80
120
160
0.5 0.5
1
2
5
10
20
50
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 10000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Ciss
Reverse Recovery Time t rr (ns)
500
Capacitance C (pF)
200 100 50
di / dt = 100 A / s V GS = 0, Ta = 25C
1000
Ciss
100
VGS = 0 f = 1 MHz Crss
20 10 0.5 10
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
500
V DD = 100 V
Switching Characteristics
Gate to Source Voltage VGS (V)
20 5000
VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 %
250 V 400 V
Switching Time t (ns)
400
16
2000 1000 500
tf tr
300
VDS
V GS
12
td (off)
200
V DD = 400 V 250 V 100 V ID = 50 A
8
200 100 50 0.5
100
4
td (on)
0
80
160
240
320
0 400
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1837
Reverse Drain Current vs. Source to Drain Voltage
100
Reverse Drain Current IDR (A)
Pulse Test
80
60
40
20
V GS = 10 V 0, - 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3
1
Tc = 25C
0.2 0.1 0.05 0.02 ch - c(t) = s(t) * ch - c ch - c = 0.5C / W, Tc = 25C P DM 0.01 T 1m 10 m 100 m 1 PW PW D= T
0.1
0.03 1 shot Pulse 100
0.01 10
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90 % Vout Monitor
D.U.T RL Vin 10 V 50
Vin Vout
10 % 10 % 10 %
VDD = 30 V
90 % td (on) tr
90 % td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1837
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZF-A
Package Name TO-3PL / TO-3PLV
MASS[Typ.] 9.9g
Unit: mm
6.0 0.2
20.0 0.3 3.3 0.2
5.0 0.2
26.0 0.3
20.0 0.6 2.5 0.3
1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2
5.45 0.5
3.8 7.4
Ordering Information
Part Name 2SK1837-E 500 pcs Quantity Box (Case) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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